transistor(pnp) features ? low collector current ? low collector power dissip ation m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 60 v v ceo collector - emitter voltage - 50 v v ebo emitter - base voltage - 6 v i c collector current - 200 m a p c collector power dissipation 200 m w r ja thermal resistance fro m j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volta ge v (br) cbo i c = - 100 a, i e =0 - 60 v collector - emitter breakdown voltage v (br) c e o i c = - 0.1 ma, i b =0 - 50 v emitter - base breakdown voltage v (br)eb o i e = - 100 a, i c =0 - 6 v collector cut - off current i cbo v cb = - 60 v, i e =0 - 100 n a emitter cut - off current i ebo v eb = - 6 v, i c =0 - 100 n a h fe (1) v ce = - 6 v, i c = - 1 ma 150 500 dc current gain h fe (2) v ce = - 6 v, i c = - 0.1 ma 90 collector - emitter saturation voltage v ce(sat) i c = - 100 ma, i b = - 10 ma - 0. 3 v b ase - emitter saturation voltage v b e(sat) i c = - 100 ma, i b = - 10 ma - 1 v transition frequency f t v ce = - 6 v, i c = - 10 ma 200 mhz collector output capacitance c ob v cb = - 6 v, i e =0, f= 1 mhz 4 pf classification of h fe ( 1 ) rank m e m f range 1 5 0 C 3 00 2 5 0 C 5 0 0 marking m e m f so t C 23 1. base 2. e mitter 3. collector 2sa1 235a 1 date:2011/05 www.htsemi.com semiconductor jinyu
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